发明名称 |
REFERENCE VOLTAGE REGULATOR FOR EDRAM WITH VSS-SENSING |
摘要 |
In a method of operating a reference voltage regulator for an embedded dynamic random access memory (eDRAM) employing VSS-sensing with a reference level, an oscillator sends requests for sampling and correction to a control block between accesses of the eDRAM. The control block sends a pulse defining a time interval during which sampling and correction occurs to a pulse generator. A reference generator provides the reference level to a comparator. The comparator compares the reference level with a sampling of a reference voltage to decide if the reference voltage requires correction. The comparator sends a correction request to a pulse generator if the reference voltage requires correction. The pulse generator generates a correction pulse for a driver according to the correction request from the comparator. The driver adjusts the reference voltage during the correction pulse. |
申请公布号 |
US2012020170(A1) |
申请公布日期 |
2012.01.26 |
申请号 |
US201113252598 |
申请日期 |
2011.10.04 |
申请人 |
NUMMER MUHAMMAD;ROMANOVSKYY SERGIY;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
NUMMER MUHAMMAD;ROMANOVSKYY SERGIY |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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