METHOD AND APPARATUS FOR MODELING DRAIN-SOURCE CURRENT OF AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR

摘要

PURPOSE: A current modeling method and apparatus of an amorphous oxide semiconductor thin film transistor are provided to improve a current calculation speed by supplying an analytical current model. CONSTITUTION: Charge density which is restricted in state density within a band gap is calculated(S310). The charge density is approximated to a major carrier component in case voltage between gate-sources is less than threshold voltage and is over than the threshold voltage(S320). Total electric charge per unit area is calculated(S330). The mobility of a channel which depends on gate voltage is calculated(S340). A first current model and a second current model are created(S350). A total current model is created using the first current model and the second current model(S360).