| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to reduce a process time and improve productivity by forming a resistance film having a variable resistance property. CONSTITUTION: In a method for fabricating a semiconductor device, a metal layer is formed on a bottom electrode(21). An oxygen is ion-implanted in the metal layer(101). A thermal process is performed to change a metal layer(22A) into a resistor film. The resistor film comprises a plurality of oxygen vacancies A top electrode is formed on the resistor film.
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