| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin-film transistor substrate in which multiple thin-film transistors having different threshold voltages can be formed by a simple method. <P>SOLUTION: The method of manufacturing a thin-film transistor substrate at least includes a step for forming a second gate electrode 10 constituted of a first conductive layer 10a consisting of an aluminum film and a second conductive layer 10b consisting of a titanium film, a step for forming a first gate electrode 11 consisting of an aluminum film and having a thickness smaller than that of the second gate electrode 10 by removing the titanium film by etching, a step for forming an oxide semiconductor layer by applying a liquid oxide semiconductor material and sintering the oxide semiconductor material, and a step for forming a first oxide semiconductor layer 13a having a first channel region Ca and a second oxide semiconductor layer 13b having a second channel region Cb the thickness T<SB POS="POST">6</SB>of which is smaller than the thickness T<SB POS="POST">5</SB>of the first channel region Ca by patterning the oxide semiconductor layer by etching. <P>COPYRIGHT: (C)2012,JPO&INPIT |
