发明名称 ACTIVE MATRIX SUBSTRATE
摘要 <p>Disclosed is an active matrix substrate (20a) which is provided with: a plurality of gate lines (14a) which are arranged so as to each extend in parallel to one another; a plurality of source lines (16a) which are arranged so as to extend in parallel to one another in a direction which intersects with each of the gate lines (14a); a plurality of TFTs (5a) which are provided so as to correspond with sections wherein the gate lines (14a) and source lines (16a) intersect, and which are connected to each of the corresponding gate lines (14a) and source lines (16a); an interlayer insulating film (17) which is arranged so as to cover each of the TFTs (5a); and a plurality of pixel electrodes (18a) which are arranged in a matrix shape on the interlayer insulating film (17). A display region (D) and a non-display region (N), which surrounds the display region (D), are respectively provided by the plurality of pixel electrodes (18a), and in the non-display region (N) a plurality of conductive layers (18b) are provided on the interlayer insulating film (17) in a manner so as to each be connected to the respective gate lines (14a).</p>
申请公布号 WO2011158427(A1) 申请公布日期 2011.12.22
申请号 WO2011JP02573 申请日期 2011.05.09
申请人 SHARP KABUSHIKI KAISHA;NAKANISHI, ISAO;TONE, SATORU 发明人 NAKANISHI, ISAO;TONE, SATORU
分类号 G09F9/30;G02F1/1368;H01L21/336;H01L21/822;H01L27/04;H01L29/786 主分类号 G09F9/30
代理机构 代理人
主权项
地址