| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method for a material having low transmittance for alignment light with high alignment accuracy in a fewer number of processes. <P>SOLUTION: The pattern forming method includes steps of: forming a first pattern including an alignment mark having a recess or a projection on a substrate; forming a flattening layer on the first pattern; removing the flattening layer formed on the alignment mark; forming a layer to be processed on the flattening layer in which a portion on the alignment mark is removed; optically detecting the position of the alignment mark from above the layer to be processed by use of light to align the alignment mark; and forming a pattern by patterning the layer to be processed based on the alignment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
