摘要 |
Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. |
申请人 |
APPLIED MATERIALS, INC.;CAO, YONG;TANG, XIANMIN;GANDIKOTA, SRINIVAS;WANG, WEI D.;LIU, ZHENDONG;MORAES, KEVIN;RASHEED, MUHAMMAD M.;NGUYEN, THANH X.;JUPUDI, ANANTHKRISHNA |
发明人 |
CAO, YONG;TANG, XIANMIN;GANDIKOTA, SRINIVAS;WANG, WEI D.;LIU, ZHENDONG;MORAES, KEVIN;RASHEED, MUHAMMAD M.;NGUYEN, THANH X.;JUPUDI, ANANTHKRISHNA |