发明名称 SELECTED AREA APERTURE PLATE OF TRANSMISSION ELECTRON MICROSCOPE, MANUFACTURING METHOD OF SELECTED AREA APERTURE PLATE, AND OBSERVING METHOD OF SELECTED AREA ELECTRON DIFFRACTION IMAGE
摘要 <P>PROBLEM TO BE SOLVED: To provide a selected area aperture plate, a manufacturing method of the same and the like, in which a fine pore can be formed while maintaining mechanical strength, and which is suitable for observing a selected area electron diffraction image of a TEM. <P>SOLUTION: The manufacturing method of a selected area aperture plate includes: forming a preliminary fabrication region 16 (2 &mu;m or less) by FIB fabrication in an aperture plate 11 composed of a single material such as tantalum or molybdenum with a depth of tens &mu;m or more whose mechanical strength is secured and which screens an electron beam; and next, forming a fine pore 15 of 1 &mu;m or less. Since a side wall portion of this fine pore 15 is formed with a sharp cutting edge and a non-taper shape, an outer periphery outside the fine pore 15 does not transmit even a high energy electron beam of 200 keV to 300 keV. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011243540(A) 申请公布日期 2011.12.01
申请号 JP20100117313 申请日期 2010.05.21
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MATSUMOTO HIROAKI;NAKANO YASUTAKA;KURODA YASUSHI
分类号 H01J37/09;H01J37/26 主分类号 H01J37/09
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