| 摘要 |
A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film. |
