发明名称 |
SEMICONDUCTOR COMPONENT AND METHOD FOR FABRICATION THEREOF |
摘要 |
The invention relates to a method for fabricating a semiconductor component, in which at least one intermediate layer is produced on a substrate, wherein, in sync with the production of the intermediate layer, thoroughfares are specifically produced therein, and then at least one semiconductor layer is grown epitaxially in the thoroughfares and on the intermediate layer. The invention likewise relates to an appropriate semiconductor component. |
申请公布号 |
WO2011144337(A1) |
申请公布日期 |
2011.11.24 |
申请号 |
WO2011EP02486 |
申请日期 |
2011.05.18 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.;SCHMICH, EVELYN;DRIESSEN, MARION;REBER, STEFAN |
发明人 |
SCHMICH, EVELYN;DRIESSEN, MARION;REBER, STEFAN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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