| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern formation method and a method of manufacturing a semiconductor device, capable of forming a pattern in which a pattern region where pattern elements are periodically arrayed and a pattern region without such periodicity coexist with a high resolution. <P>SOLUTION: According to one embodiment of this invention, the pattern formation method comprises: a step of irradiating a mask with light from an illumination provided with a pair of main openings and four auxiliary openings which are at symmetrical positions regarding a first straight line connecting the centers of the pair of main openings and a second straight line orthogonal to the first straight line and are not on the first straight line, condensing zero-order diffracted light and first-order diffracted light diffracted by the mask, and exposing a resist film; and a step of forming a resist pattern in which a first pattern region where the pattern elements are periodically arrayed and a second pattern region without the periodicity are formed by developing the exposed resist film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
