PREPARATION OF GRAPHENE THIN FILM TRANSISTOR USING THE EDGE-FUNCTIONALIZED TWO-DIMENSIONAL GRAPHENE NANORIBBONS

摘要

PURPOSE: A method for manufacturing a thin film transistor using a two-dimensional graphene nano ribbon is provided to control the length of a graphene nano ribbon by using a Pd catalyst. CONSTITUTION: A source electrode and a drain electrode are connected to both sides of a channel layer. A gate electrode corresponds to the channel layer. A gate insulation layer is formed between the channel layer and the gate electrode. After the gate insulation layer is deposited on the gate electrode, the source electrode and the drain electrode are formed by a lithograph process. A hydrophobic organic layer is laminated after the gate insulation layer, the source electrode, and the drain electrode are surface-processed.