| 摘要 |
A method of wafer level purifying light color of a LED semiconsuctor is disclosed. After a LED wafer is fabricated, multi-transparent films formed of first layer and a second layer alternatively until reaching a predetermined number deposited by e-gun deposition with an aid of ion plasma beam. The first layer is formed of an oxide layer and the second layer is formed of a metal oxide layer. The two materials, one has a high index of refraction and the other has a low index of refraction. The total multi-transparent films are about 80 to 120 layer which can narrow wave width about a central wavelength.
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