| 摘要 |
PROBLEM TO BE SOLVED: To provide an n-type thermoelectric semiconductor which is made of a rare earth borosilicide and has a high density. SOLUTION: The n-type thermoelectric semiconductor is obtained by adding titanium, molybdenum, or rhodium to the rare earth borosilicide, and has a density of 100%, the composition thereof being represented by formula 1. Further, an n-type thermoelectric semiconductor is characterized in that the rare earth element (RE) thereof is a tervalent rare earth element. A thermoelectric power generation element 31 is formed by integrating a p-type semiconductor 33 with an n-type semiconductor 32, and uses a thermoelectric semiconductor made of a rare earth borosilicide as the p-type element and also uses an n-type thermoelectric semiconductor of one of claims 1 to 3 as the n-type semiconductor 32. COPYRIGHT: (C)2011,JPO&INPIT |
