发明名称 |
EUV lithography apparatus and method for determining the contamination status of an EUV-reflective optical surface |
摘要 |
The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer. |
申请公布号 |
US8054446(B2) |
申请公布日期 |
2011.11.08 |
申请号 |
US20080196075 |
申请日期 |
2008.08.21 |
申请人 |
CARL ZEISS SMT GMBH |
发明人 |
KRAUS DIETER;EHM DIRK HEINRICH;SCHMIDT STEFAN-WOLFGANG |
分类号 |
G03B27/52;G03B27/42 |
主分类号 |
G03B27/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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