| 摘要 |
PROBLEM TO BE SOLVED: To provide an electron source improved in the electron discharge characteristics, in comparison with those of conventional ones.SOLUTION: An electron passing layer 6 is provided between a lower electrode 2 and a surface electrode 7. The electron passing layer 6 includes a first electron passing part 6a on a lower electrode 2 side; and a second electron passing part 6b on a surface electrode 7 side. The second electron passing part 6b includes multiple second grains 32a formed along the thickness direction of the lower electrode 2; a first insulating thin film 35 formed in the surface of each of the second grains 32a; multiple nanometer-order fine crystalline semiconductors 33, interposed between the second grains 32a adjacent to each other; and a second insulating thick film 34 formed in the surface of each of the fine crystalline semiconductors 33 and formed smaller in the crystal grain diameter than the fine crystalline semiconductor 33. A region 36 of the second electron passing part 6b, in which the second grains 32a are formed in the thickness direction, and the first electron passing part 6a are mutually different in the crystal orientation, and the second grain 32a is higher than the first grain in the columnar structure. |
