发明名称 |
Semiconductor device with trench field plate including first and second semiconductor materials |
摘要 |
In one embodiment, a field effect transistor has a semiconductor body, a drift region of a first conductivity type and a gate electrode. At least one trench extends into the drift region. A field plate is arranged at least in a portion of the at least one trench. A dielectric material at least partially surrounds both the gate electrode and the field plate. The field plate includes a first semiconducting material.
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申请公布号 |
US8044459(B2) |
申请公布日期 |
2011.10.25 |
申请号 |
US20080268182 |
申请日期 |
2008.11.10 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
HIRLER FRANZ;RIEGER WALTER;WOOD ANDREW;BORN MATHIAS;SIEMIENIEC RALF;ROPOHL JAN;POELZL MARTIN;BLANK OLIVER;HILLER ULI;HAEBERLEN OLIVER;ZELSACHER RUDOLF;ROESCH MAXIMILIAN;KRUMREY JOACHIM |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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