摘要 |
<p>The disclosed power converter device is provided with a power semiconductor element, a driver circuit for outputting a drive signal for driving the power semiconductor element, a buffer circuit which, configured to include PNP and NPN transistors, outputs a gate voltage for driving the power semiconductor element, a first delay circuit which acquires the drive signal and generates a first delay signal on the basis of input of said drive signal, and a first MOSFET the drain side of which is connected to the output unit side of the buffer circuit and which is driven on the basis of the first delay signal. A current flows through the buffer circuit and the first MOSFET on the basis of the input of the drive circuit. The first delay circuit outputs the first delay signal after the buffer circuit leaves a transition state and assumes an ON state. The power semiconductor element assumes an ON state when the gate voltage is applied from the buffer circuit by means of the switching action of the first MOSFET on the basis of the first delay signal.</p> |
申请人 |
HITACHI AUTOMOTIVE SYSTEMS, LTD.;SHIMANO, HIROKI;NOTO, YASUO;YAHATA, KOICHI;FUNABA, SEIJI;AKAISHI, YOSHIO |
发明人 |
SHIMANO, HIROKI;NOTO, YASUO;YAHATA, KOICHI;FUNABA, SEIJI;AKAISHI, YOSHIO |