发明名称 |
Non-volatile memory devices including stacked NAND-type resistive memory cell strings |
摘要 |
A non-volatile memory device includes a substrate, an insulating layer on the substrate, and a plurality of serially connected resistive memory cells stacked in the insulating layer such that a first one of the plurality of resistive memory cells is on the substrate and a next one of the plurality of resistive memory cells is on the first one of the plurality of resistive memory cells to define a NAND-type resistive memory cell string. A bit line on the insulating layer is electrically connected to a last one of the plurality of resistive memory cells. At least one of the plurality of resistive memory cells may include a switching device and a data storage element including a variable resistor connected in parallel with the switching device. Related devices and fabrication methods are also discussed.
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申请公布号 |
US8036018(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20100917175 |
申请日期 |
2010.11.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOH GWAN-HYEOB;HA DAE-WON |
分类号 |
G11C11/34;G11C5/06;G11C11/00;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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