| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory the reliability of which has been improved, and its erasing method, and to provide a memory system incorporating the memory. <P>SOLUTION: An erasing method of a nonvolatile memory includes a step of applying a word line erasing voltage to each of a number of word lines, respectively connected to the memory cells; a step of applying a specific voltage to the ground selection line connected to the ground selection transistor, a step of applying the erasing voltage to the substrate where the memory string is formed during the step of applying a specific voltage to the ground selection line, and a step of floating the ground selection line as the substrate voltage changes. <P>COPYRIGHT: (C)2011,JPO&INPIT |
