| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for correction of a white defect in a mask pattern, capable of precisely correcting the white defect without damaging a photomask by using near field light, and to provide a mask pattern. <P>SOLUTION: The method is provided for correction of the white defect 3 occurring in the mask pattern. In the method, correction is carried out by decomposing a material gas introduced into a processing chamber by the near field light 5 existing in the vicinity of the white defect 3, and forming a thin film in the white defect part. The mask pattern obtained by the correction method of a white defect is also provided. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
