SWITCHING MECHANISM OF MAGNETIC STORAGE CELL AND LOGIC UNIT USING CURRENT INDUCED DOMAIN WALL MOTIONS
摘要
A magnetic memory cell is provided that includes a free layer that is pinned on both of its sides to form one or more domain wall structures. The one or more domain wall structures define one or more logic states by controlling the motion of the one or more domain wall structures.
申请公布号
WO2011115794(A2)
申请公布日期
2011.09.22
申请号
WO2011US27702
申请日期
2011.03.09
申请人
MASSACHUSETTS INSTITUTE OF TECHNOLOGY;MIAO, GUO-XING;MOODERA, JAGADEESH, S.