| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method in which the film deposition rate by the sputtering is reduced, a metal thin film with excellent coatability is formed on an inner wall surface and an inner bottom surface of a hole or a groove with the aspect ratio being≥3 formed in a surface of a workpiece, and the self-hold discharge in a target is generated even with small power. SOLUTION: In a step in which the voltage V and the current I are applied to a target 3, introduction of sputtering gas is stopped after discharge is generated from the target within a chamber 2, the self-hold discharge is generated by ions of the target, and a metal thin film is formed on the entire surface of a workpiece including a hole or a groove in the surface of the workpiece W, the current I to be applied to the target is made constant, the voltage V is increased when the discharge becomes unstable, and at the same time, the formulae (1) and (2) are satisfied, where I>I<SB>0</SB>(1) and P>P<SB>0</SB>(2), in which I<SB>0</SB>denotes the minimum value of the current starting the self-hold discharge, P denotes the power of the target, and P<SB>0</SB>denotes the minimum value of the power starting the self-hold discharge. COPYRIGHT: (C)2011,JPO&INPIT |
