发明名称 METHOD OF THERMAL DENSITY OPTIMIZATION FOR DEVICE AND PROCESS ENHANCEMENT
摘要 The present disclosure provides an integrated circuit method. The method includes providing an integrated circuit (IC) design layout; simulating thermal effect to the IC design layout; simulating electrical performance to the IC design layout based on the simulating thermal effect; and performing thermal dummy insertion to the IC design layout based on the simulating electrical performance.
申请公布号 US2011214101(A1) 申请公布日期 2011.09.01
申请号 US20100713902 申请日期 2010.02.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHENG YING-CHOU;OU TSONG-HUA;HSU CHIH-WEI;TSAI CHENG-LUNG;LIU RU-GUN;HUANG WEN-CHUN;LUO BOREN
分类号 G06F17/50 主分类号 G06F17/50
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