| 摘要 |
A multi-column electron beam lithography apparatus includes multiple columns, each including a mask having several aperture patterns; a selective deflector to deflect an electron beam to select an aperture pattern; a bending back deflector to bend the beam passed through the pattern back to the column optical axis; and an electron beam trajectory adjustment unit to adjust deflection efficiencies of the deflectors without the mask installed to allow the beam deflected toward any positions in a deflection region to be bent back and applied to the same position on a sample, and to adjust the deflection efficiency of the selective deflector with the mask installed to allow the beam to be deflected toward any pattern of the mask, while maintaining a relationship between the deflection efficiencies.
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