| 摘要 |
<p>According to one embodiment, a semiconductor light emitting device (110, 111, 112, 112a, 112b) includes n-type and p-type semiconductor layers (10, 20), a light emitting portion (30), a multilayered structural body (40), and an n-side intermediate layer (50). The light emitting portion (30) is provided between the semiconductor layers (10, 20). The light emitting portion (30) includes barrier layers (31) containing GaN, and a well layer (32) provided between the barrier layers (31). The well layer (32) contains In x1 Ga 1-x1 N. The body (40) is provided between the n-type semiconductor layer (10) and the light emitting portion (30). The body (40) includes: first layers (41) containing GaN, and a second layer (42) provided between the first layers (41). The second layer (42) contains ln x2 Ga 1-x2 N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer (50) is provided between the body (40) and the light emitting portion (30) and includes a third layer (51) containing Al y1G a 1-y1 N (0<y1‰¤0.01).</p> |
