| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a bit line contact of a buried bit line. <P>SOLUTION: A method for manufacturing a semiconductor device includes steps of: etching a semiconductor substrate to form a plurality of pillars 115; depositing a first protective film 120 on sidewalls of the pillar; firstly etching the semiconductor substrate with the pillar deposited with the first protective film as a mask; forming a first insulating film 125 on the firstly etched semiconductor substrate and the sidewalls of the pillar; secondly etching the semiconductor substrate with the pillar including the first insulating film as a mask; forming a second protective film 130 and a second insulating film 135 on the surface of the secondly etched semiconductor substrate; depositing a barrier film 140 on the sidewalls of the pillar including the second insulating film; and removing the barrier film disposed at one sidewall of the pillar, the first insulating film, and the second insulating film to form a contact hole defined by the first protective film and the second protective film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
