| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which loss on a substrate is reduced in circuit operation, the degree of freedom in wiring is improved by forming a multi-layer wiring on both front and rear surfaces, and signal transmission speed is increased by shortening the wiring length of a through wiring. <P>SOLUTION: A thin film semiconductor element 2 is formed using an SOI wafer and is detached from its silicon substrate. Accordingly, the thickness of the element is≤2μm for example, including a buried oxide film. The through wiring 6 does not penetrate through the front and rear surfaces of the device, but is integrally formed in forming a contact via to be adjacent to the thin film semiconductor element. Thus, its diameter is almost the same as that of the contact via of the thin film semiconductor element, and its length is almost the same as that of the thin film semiconductor element. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
