NONVOLATILE MEMORY ARRAY WITH CONTINUOUS CHARGE STORAGE DIELECTRIC STACK

摘要

PURPOSE: A non-volatile memory array with a dielectric stack structure successively storing charge is provided to prevent an electric charge from moving laterally in the SiN trapping layer by etching dielectric stacks between NAND rows and neighbor memory cells in a NAND row. CONSTITUTION: A plurality of word lines accesses to the array of a nonvolatile memory cell. A plurality of bit lines accesses to the array of the nonvolatile memory cell. The array of the nonvolatile memory cell stores non-volatile data in the locations of the dielectric stack structure which is accessed by a plurality of word lines and a plurality of bit lines with a dielectric stack structure in a substrate. An implanting area under the dielectric stack structure is arranged between the locations of the dielectric stack structure.