| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a display device achieving high mobility in an oxide semiconductor and high reliability. <P>SOLUTION: A first oxide member is formed on a base material member, a first heat treatment is performed to grow crystal from a surface toward the inside to form a first oxide crystal member at least partially in contact with the base material member, and a second oxide member is formed on the first oxide crystal member, a second heat treatment is performed to grow crystal using the first oxide crystal member as a seed to form a second oxide crystal member. A high mobility transistor is formed using a laminated oxide material, and a driver circuit is formed on the same substrate using it. <P>COPYRIGHT: (C)2011,JPO&INPIT |
