| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the resistance of a buried bit line by forming the buried bit line including metal. CONSTITUTION: A plurality of trenches are formed by etching a semiconductor substrate including a cell region and an edge region. A sidewall oxide layer(23) is formed on the inner wall and bottom of the trench by a thermal process. A first linear nitride layer(24A) is formed along the front sides of the plurality of trenches. A sidewall contact region is formed to open the inner wall of the trench on the cell region by partially removing the first liner nitride layer formed on the inner wall of the trench on the cell region. A conductive layer for a sidewall contract is formed along the front sides of the plurality of trenches.</p> |
