| 摘要 |
PROBLEM TO BE SOLVED: To solve the following problems: a conventional resistive element using a polysilicon layer for a resistance layer cannot provide desired sheet resistance when the sheet resistance of the resistive element is intended to be increased to, for instance, 10 MΩ/square or higher, the cause thereof may be attributed to charging of an insulating film on the polysilicon layer during a manufacturing process, and thereby only sheet resistance lower by two or more digits than a design value can be obtained; and dispersion of resistance layers is increased on a resistive element basis even in the same wafer. SOLUTION: In this resistive element using a polysilicon layer for a resistance layer, a protective layer is formed on an insulating film covering the resistance layer. The protective layer is a metal layer, and can be formed with a wiring layer of the resistive element, or a metal layer identical to a metal layer of an electrode or the like. The protective layer is formed in a pattern with a bent part of the polysilicon layer exposed therefrom. Fixed potential is applied to the protective layer. Different sheet resistance is provided in accordance with the fixed potential. COPYRIGHT: (C)2011,JPO&INPIT
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