| 摘要 |
According to one embodiment, a nonvolatile memory device includes a memory layer and a driver section. The memory layer has a first state having a first resistance under application of a first voltage, a second state having a second resistance higher than the first resistance under application of a second voltage higher than the first voltage, and a third state having a third resistance between the first resistance and the second resistance under application of a third voltage between the first voltage and the second voltage. The driver section is configured to apply at least one of the first voltage, the second voltage and the third voltage to the memory layer to record information in the memory layer.
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