| 摘要 |
PURPOSE: A method of fabricating an image sensor is provided to reduce the noise an image sensor by combining nitrogen ion and hydrogen ion to a dangling bond which is formed on the surface of a photodiode. CONSTITUTION: In a method of fabricating an image sensor, a gate(140) is formed in a semiconductor substrate(100). A photo diode(200) is formed in a semiconductor substrate in one side of the gate. The first interlayer dielectric layer(320) and a nitride film are formed a semiconductor substrate in which the photo diode and the gate are formed. The nitride film on the semiconductor is removed by performing sintering of a semiconductor substrate A second interlayer dielectric layer is formed on the first interlayer dielectric layer with removed nitride film.
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