摘要 |
The invention relates to an active zone (5) for a light emission system (1), said active zone including a series of layers (50-52, 60-64, 70-74), at least a portion of which consists of antimony semiconductors III-V, said layers (50-52, 60-64, 70-74) being arranged so as to form at least one quantum well (6, 7) surrounded by barriers (41, 42, 43) with a view to generating a light emission (9). Said active zone (5) also includes at least one layer (61, 63, 71, 73) capable of forming an intermediate barrier that is arranged relative to a quantum well (6, 7) so as to form at least two quantum sub-wells (60, 62, 64, 70, 72, 74) that are coupled with each other. The invention also relates to: a heterostructure (4) including at least one optical confinement layer (41, 43) surrounding at least one such active zone (5); a laser emission system (1) including one such heterostructure (4) that is deposited onto a substrate (2); and the use one such active zone (5) with a view to emitting a light beam having a wavelength of 1.55 µm. |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - CNRS;UNIVERSITE MONTPELLIER 2;CERUTTI, LAURENT;RODRIGUEZ, JEAN-BAPTISTE;TOURNIE, ERIC |
发明人 |
CERUTTI, LAURENT;RODRIGUEZ, JEAN-BAPTISTE;TOURNIE, ERIC |