| 摘要 |
PURPOSE: A nitride gallium based vertical light emitting diode and a manufacturing method thereof are provided to improve the light output of the nitride gallium based vertical light emitting diode by using an Ag based high reflection p type electrode, a quasi-photonic crystal and surface roughening. CONSTITUTION: A p type ohmic electrode layer is formed on the upper side of a substrate. A p type GaN based III-V group compound semiconductor layer is formed on the upper side of an electrode layer. An n type GaN based III-V group compound semiconductor layer is formed on the nitride gallium based III-V group compound semiconductor layer. An n type ohmic electrode layer is formed on the upper side of the n type nitride gallium III-V group compound semiconductor layer. The p type ohmic electrode layer includes a high reflection electrode with reflectance over 70%. The n type nitride gallium based III-V group compound semiconductor layer includes a layer whose surface is changed by the surface roughening and quasi-photonic crystal. |
