| 摘要 |
<p>The present disclosure provides a method (1000) for forming a semiconductor structure (1, 1a, 1b, 1c) and an apparatus (500) for the manufacture of the semiconductor structure (1, 1a, 1b, 1c). The semiconductor structure (1, 1a, 1b, 1c) comprises at least one semiconductor layer (20, 20a, 20b) with a concentration of interstitials being substantially higher than an equilibrium concentration of the interstitial in the at least one semiconductor layer (20, 20a, 20b), The method (1000) comprises providing (100) and a processing (200) of the at least one semiconductor layer (20, 20a, 20b). The processing (200) comprises an irradiating (210) and an annealing (220) of the at least one semiconductor layer (20, 20a, 20b). The irradiating (210) and the annealing (220) of the at least one semiconductor layer (20, 20a, 20b) are substantially performed concurrently. The semiconductor structure (1, 1a, 1b, 1c) may comprise an n-type Ge MOSFET (50). The apparatus (500) comprises a production chamber (510), a heating unit (520) and a beam access (530) or a beam unit (550). The apparatus (500) may concurrently expose the at least one semiconductor layer (20, 20a, 20b) to a target temperature and a beam (540), The present disclosure provides the n-type Ge MOSFET (50).</p> |
