OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an oxide semiconductor film having a new structure which is preferably used for a semiconductor device or to provide a semiconductor device using an oxide semiconductor film having the new structure.

SOLUTION: An oxide semiconductor film has an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7in the vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor film.

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