<p>A semiconductor structure includes a GaAs or InP substrate, an In<SUB>x</SUB>Ga<SUB>1-x</SUB>As epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the In<SUB>x</SUB>Ga<SUB>1-x</SUB>As epitaxial layer.</p>
申请公布号
HK1106330(A1)
申请公布日期
2011.05.13
申请号
HK20080100313
申请日期
2008.01.10
申请人
PICOMETRIX, LLC
发明人
SACKS, ROBERT, N.;JAZWIECKI, MATHEW, M.;WILLIAMSON, STEVEN, L.
