| 摘要 |
A bit line sense amplifier circuit for use in a semiconductor memory device, and a control method thereof, in which the bit line sense amplifier circuit is controlled to maintain a precharge state thereof until a sense amplifier enable signal to enable the sense amplifier circuit is applied, thereby preventing the bit line sense amplifier circuit of the semiconductor memory device from floating, and preventing or substantially reducing a coupling effect, thereby providing a precise data sensing and amplification operation.
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