发明名称 SOLID-STATE IMAGING DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To have a reset transistor and amplifier transistor in common in four or more pixel without increasing read time. <P>SOLUTION: In a CMOS imaging sensor with a structure having four pixels per cell, a signal of pixel to be read this time via the amplifier transistor is read, and charge that has been accumulated in the pixel to be read next time is transferred and a signal is made to be read via the amplifier transistor. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011091341(A) 申请公布日期 2011.05.06
申请号 JP20090245846 申请日期 2009.10.26
申请人 TOSHIBA CORP 发明人 SANO FUMIAKI
分类号 H01L27/146;H04N5/335 主分类号 H01L27/146
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