| 发明名称 |
POST PASSIVATION INTERCONNECT WITH OXIDATION PREVENTION LAYER |
| 摘要 |
A copper interconnect line formed on a passivation layer is protected by a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof. |
| 申请公布号 |
US2011101521(A1) |
申请公布日期 |
2011.05.05 |
| 申请号 |
US20100907249 |
申请日期 |
2010.10.19 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HWANG CHIEN LING;WU YI-WEN;LIU CHUNG-SHI |
| 分类号 |
H01L23/52 |
主分类号 |
H01L23/52 |
| 代理机构 |
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| 地址 |
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