| 摘要 |
PURPOSE: To precisely arrange compact precise elements and, at the same time, to use a reflecting film as wiring by mounting a light emitting element and an integrated circuit on one head. CONSTITUTION: An npn transistor 22 is fabricated on a P-type silicon substrate 2 and a base electrode 18, an emitter electrode 17, and a collector electrode 19 are formed in the transistor 22. After an intermediate-layer metallic film 20 is formed, a metallic film 9 is vapor-deposited on the film 20 and a light emitting element 1 is mounted in the groove of the silicon substrate 2. The transistor 22 is electrically insulated from the element 1 by an insulating film 11 and the electrode 19 of a collector 16 and the lower layer 7 of the element 1 are connected to each other in the state of an equivalent circuit through the metallic films 9 and 20. |
