| 摘要 |
PURPOSE: A semiconductor device and a method for forming using the same are provided to prevent leakage current from a transistor by easily forming an element isolation film in a semiconductor IC to accurately define an active region. CONSTITUTION: In a semiconductor device and a method for forming using the same, an epitaxial growth layer(110) and an insulating layer(108) are formed on a semiconductor substrate(100). The lower region of the insulating layer has thickness of 1500Å to 2000Å. The upper region of the insulating layer has thickness of 1500Å to 2000Å. The epitaxial growth layer which is exposed from the top side of an insulating film is defined as the active region. The insulating layer is defined as the element isolation film.
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