| 摘要 |
A substrate processing apparatus, for performing a plasma process to a substrate (W) in a processing container held in a vacuum state, has a substrate placing table (5) for placing thereon the substrate (W) in the processing container. The substrate placing table (5) includes: a substrate placing table body (51) composed of AlN; a heat generation member (56) disposed in the substrate placing table body (51) for heating the substrate; a first cover (54), made of quartz, covering a surface of the substrate placing table body (51); a plurality of lift pins (52) for moving the substrate (W) up and down; a plurality of insertion holes (53) through which the lift pins (52) are inserted in the substrate placing table body (51); a plurality of openings (54a) formed in the first cover, located at positions corresponding to the plurality of insertion holes (53), respectively; and second covers (55) made of quartz which are formed separately from the first covers, and each of which covers at least a portion of an inner surface of the opening (54a) and at least a portion of an inner circumferential surface of the insertion hole (53). |
