| 摘要 |
There is provided a semiconductor device that enables high-speed data read and reduces the area of a drive circuit for activating a word line. By signal transmission through a common word line having a low resistance and coupled at a plurality of points to a word line, it is possible to read data at high speed. Further, since the common word line is provided common to a plurality of memory blocks, a word line driver can be provided common to the memory blocks. Further, by disposing a latch circuit, corresponding to a sub-digit line, for holding the active state of the common word line, it is possible to transmit a row selection signal during data write through the common word line and thereby reduce a metal wiring layer.
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