发明名称 THIN FILM, METHOD FOR FORMING SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT COMPRISING THE THIN FILM
摘要 <p>Disclosed is a method for stably forming an N-doped ZnO compound thin film. Specifically, an N-doped ZnO compound thin film is formed on a substrate, which is an object on which a film is to be formed, by supplying a gas containing oxygen and nitrogen and a nitrogen gas together with an organic metal material gas into a low electron temperature high density plasma that is excited by a microwave.</p>
申请公布号 WO2011043414(A1) 申请公布日期 2011.04.14
申请号 WO2010JP67637 申请日期 2010.10.07
申请人 TOHOKU UNIVERSITY;ROHM CO., LTD.;TOKYO ELECTRON LIMITED;OHMI, TADAHIRO;ASAHARA, HIROKAZU;INOKUCHI, ATSUTOSHI 发明人 OHMI, TADAHIRO;ASAHARA, HIROKAZU;INOKUCHI, ATSUTOSHI
分类号 C23C16/40;C23C16/511;H01L21/365;H01L33/42 主分类号 C23C16/40
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