发明名称 |
THIN FILM, METHOD FOR FORMING SAME, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT COMPRISING THE THIN FILM |
摘要 |
<p>Disclosed is a method for stably forming an N-doped ZnO compound thin film. Specifically, an N-doped ZnO compound thin film is formed on a substrate, which is an object on which a film is to be formed, by supplying a gas containing oxygen and nitrogen and a nitrogen gas together with an organic metal material gas into a low electron temperature high density plasma that is excited by a microwave.</p> |
申请公布号 |
WO2011043414(A1) |
申请公布日期 |
2011.04.14 |
申请号 |
WO2010JP67637 |
申请日期 |
2010.10.07 |
申请人 |
TOHOKU UNIVERSITY;ROHM CO., LTD.;TOKYO ELECTRON LIMITED;OHMI, TADAHIRO;ASAHARA, HIROKAZU;INOKUCHI, ATSUTOSHI |
发明人 |
OHMI, TADAHIRO;ASAHARA, HIROKAZU;INOKUCHI, ATSUTOSHI |
分类号 |
C23C16/40;C23C16/511;H01L21/365;H01L33/42 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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