发明名称 Method for conducting over-erase correction
摘要 A method for conducting an over-erase correction describes the steps of: conducting a first erase and verification operation; using an FN soft program to correct over-erased cells if bit line leakage is found after the first erase and verification operation; conducting a second erase and verification operation; and using a hot carrier HC soft program to correct over-erased cells if bit line leakage is found after the second erase and verification operation.
申请公布号 US7924610(B2) 申请公布日期 2011.04.12
申请号 US20090350635 申请日期 2009.01.08
申请人 ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. 发明人 CHEN CHUNG ZEN;KUO CHUNG SHAN;HSUE TZENG JU;LEU CHING TSANN
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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