发明名称 |
Method for conducting over-erase correction |
摘要 |
A method for conducting an over-erase correction describes the steps of: conducting a first erase and verification operation; using an FN soft program to correct over-erased cells if bit line leakage is found after the first erase and verification operation; conducting a second erase and verification operation; and using a hot carrier HC soft program to correct over-erased cells if bit line leakage is found after the second erase and verification operation.
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申请公布号 |
US7924610(B2) |
申请公布日期 |
2011.04.12 |
申请号 |
US20090350635 |
申请日期 |
2009.01.08 |
申请人 |
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. |
发明人 |
CHEN CHUNG ZEN;KUO CHUNG SHAN;HSUE TZENG JU;LEU CHING TSANN |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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