发明名称 Laminated thin-film device, manufacturing method thereof, and circuit
摘要 The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
申请公布号 US2011073993(A1) 申请公布日期 2011.03.31
申请号 US20100926733 申请日期 2010.12.07
申请人 FUJITSU LIMITED 发明人 BANIECKI JOHN DAVID;SHIOGA TAKESHI;KURIHARA KAZUAKI
分类号 H01G7/06;H01L29/92;H01L21/02;H01L21/822;H01L27/04 主分类号 H01G7/06
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