MEMORY DEVICES HAVING ELECTRODES COMPRISING NANOWIRES, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME

摘要

Memory devices having memory cells comprising variable resistance material include an electrode comprising a single nanowire. Various methods may be used to form such memory devices, and such methods may comprise establishing contact between one end of a single nanowire and a volume of variable resistance material in a memory cell. Electronic systems include such memory devices.